APT MCD200
|
|
- Ideal for Process R&D
- Material Size: ¨ª8¡±Wafer or 6¡±square Glass
- RPM: 1 ~12.000 rpm(10,000 rpm optional)
(for mechanical/non-vacuumchuckswe recommend max. 3.000rpm)
- program:unlimited programs with max.unlimited step
- Accuracy (+/- 1 rpm),Digital control Stepping Motor
- Chemical resistant NPP or Teflon Bowl
- Digital Process Controller-easy step-by-step
- Programmable Digital Acceleration/Deacceleration 30,000 rpm/sec
- Clear Lid with 19mm center hole
- Drain Port, Nitrogen Purge Port
- Specially designed Bowl for Anti-Reflection & Reducing
the the airflow to zero
- Safety Door Interlock:Rotating stops when opening door
- Centering Tool Included
- German-APT Made CE-approved
- Remote control pannel available (Globebox »ç¿ë½Ã À¯¿ë)
- chuck :6-8''wafer
- ¿ëµµ : ¿þÀÌÆÛ PR ÄÚÆÃ,À¯±â¹Ú¸·ÄÚÆÃ,
ITO Glass ¹Ú¸·ÄÚÆÃ
ÀÛµ¿ ¸ð½À
Determination of spincoating uniformity and wafer to wafer uniformity
of the APT Spincoating system using AZ5214E resist.
( By: T. Zijlstra TUDelft B. de Lange TUDelft B. van Weelde SPS )
- APT SpincoaterÀÇ Æ¯Â¡
Wafer uniformityÀÇ Çâ»óÀ» À§ÇÑ 2 Point
1. acceleration during ramp up: Changing the acceleration
resulted in more smooth resist films,
i.e. ¡°comet¡± tails disappeared when the acceleration
during ramp up was increased to 1000 rpm per second, with a final spinning
speed of 5000 rpm.
2. Airflow in the spinbowl: Reducing
the the airflow to zero resulted in circular uniformal resist
pattern on the wafer
- Wafer to wafer uniformity:
** For these experiments we used the ¡°optimized¡± conditions,
i.e. a ramp up of 1000 rpm per second for five seconds, then a spinning
speed of 5000 rpm for 55 seconds.
The airflow in the spinning bowl was reduced to zero.
1. The spinning conditions for AZ 5214E was optimized, although we are
convinced that conditions could have been further optimized if we would
have had more time available.
2. The wafer uniformity found, is better than 2.5%
3. The wafer to wafer uniformity was found to be 3%.
4. Improving the experimental setup would probably resulted in better
wafer uniformity and wafer to wafer uniformity.
|